As the training and inference demands of large AI models surge exponentially, chip power density keeps breaking traditional process limits. Hidden bottlenecks in power delivery and signal transmission across computing hardware have become unseen barriers holding back full hardware performance potential.

Against the shift of mainstream chip packaging toward highly integrated 2.5D/3D architectures, power integrity (PI) has evolved into a core bottleneck holding back full chip performance release. Suna silicon capacitors revolutionize traditional multilayer ceramic capacitor solutions. Due to silicon capacitors feature ultra-low parasitic parameters and superior integrability, they can be seamlessly embedded inside chip packages to deliver long-term stable near-point voltage regulation and noise suppression for HPC and AI chips. While cutting overall system power consumption, they fully unlock chip performance. Whether applied in kilowatt-level AI training clusters, AI inference chips with stringent transient response requirements, or compact smartphones and wearable devices, silicon capacitors deliver near-ideal capacitive performance to serve as a foundational passive component supporting the AI boom.

AI chips inherently carry four defining characteristics: high power draw, large current throughput, rapid transient fluctuations, and high-frequency operation. Furthermore, advanced packaging shortens power distribution network (PDN) signal paths while boosting density, imposing far stricter requirements on decoupling capacitors within packages.

Though mature and cost-effective, traditional MLCCs exhibit prominent drawbacks under advanced packaging scenarios:

Elevated parasitic parameters: Their equivalent series inductance (ESL) typically sits at the nanohenry (nH) level, triggering impedance spikes at high frequencies and failing to meet GHz wideband filtering demands. Their relatively high equivalent series resistance (ESR) generates excessive power loss and heat under high-current packaging conditions.

Insufficient stability: Capacitance fluctuates drastically with voltage and temperature, with accelerated aging at high temperatures, resulting in service lifespans unable to satisfy the 24/7 operation requirements of AI servers.

Poor integrability: Most MLCCs exceed 200 μm in thickness, making them unfit for mounting on interposer substrates or underneath chips. They can only be surface-mounted around package peripherals, introducing extra routing traces that raise system power consumption and enlarge PDN loop inductance, leading to lagging voltage regulation response.

Excessive footprint occupation: Multiple MLCCs must be paralleled around chips to improve power integrity. Exposed large bonding pads and keep-out zones occupy substantial board space, conflicting with the trend of high-density integration.

Silicon capacitors are high-performance passive components fabricated via semiconductor manufacturing processes, adopting a proprietary 3D trench structure that abandons the ceramic sintering technique used for MLCCs. They deliver transformative performance improvements at both material and structural levels, with core advantages outlined below:

1. Ultra-Low Parasitic Parameters for Full-Coverage High-Frequency Filtering

High-Density Silicon Capacitor

The ESL of silicon capacitors can drop to the picohenry (pH) range, while ESR reaches the milliohm (mΩ) tier, approaching ideal capacitor characteristics. They maintain flat low-impedance performance across MHz to GHz wide frequency bands, effectively eliminating high-frequency switching noise and harmonic interference from AI chips. This drastically mitigates PDN impedance mismatch, suppresses voltage ripples, and enables host chips to sustain stable full-frequency operation under heavy loads or multi-task workloads.

2. Ultra-High Capacitance Density&Ultra-Thin Form Factor Enable Seamless Co-Integration With Chips Inside Packages.

Built with 3D silicon trench and stacked architectures, silicon capacitors achieve microfarad (μF)-level capacitance density per square millimeter while retaining a thickness below 100 μm. This allows direct attaching on interposer substrates, chip peripherals, or embedded placement within substrates, enabling three-dimensionally integrated packaging of capacitors, chips and substrates. Serving as near-point decoupling capacitors for core power domains, they shrink current transmission paths to micrometer scales, minimize PDN loop inductance, and deliver zero-latency response to abrupt current transients.

3. Ultra-Wide Temperature Stability&Extended Service Life for Round-the-Clock Reliability in Harsh Environments

Silicon substrates and semiconductor fabrication grant exceptional precision and stability. Silicon capacitors operate reliably across a -45°C to 150°C temperature range with capacitance variation controlled within 5%. Under rated voltage and 125°C continuous operation, their service life exceeds 10 years, easily meeting the 5–10 year fault-free operation standard for AI servers. Additionally, silicon substrates share material compatibility with main processing chips, delivering superior process consistency during flip-chip bonding and underfill curing for 2.5D/3D packaging, while facilitating thermal management design.

The global artificial intelligence industry is undergoing an unstoppable expansion, with profound technological evolution and industrial restructuring reshaping the global economic landscape. Rapid advances in AI hardware infrastructure have elevated the strategic importance of passive components such as capacitors, driving an industry-wide transition from premium high-end ceramic capacitors to silicon capacitors.

SUNA Optoelectronics has long maintained deep specialization in silicon capacitor R&D, with full in-house capabilities spanning design, manufacturing, testing and application support. The company has delivered mass-producible silicon capacitor solutions to numerous leading domestic and international AI industry partners. SUNA silicon capacitors support customized capacitance, dimensional specifications and pin layout designs to match the optimal architectures of diverse chip packages.

Moving forward, SUNA will ramp up R&D investment to pursue silicon capacitor technologies with higher capacitance density and greater integration. Collaborating closely with upstream and downstream partners including chip design houses, advanced packaging vendors and equipment manufacturers, SUNA will inject core semiconductor momentum into the development of global AI infrastructure.

SUNA

June 24, 2026